发明名称 |
SOLID-STATE IMAGING DEVICE AND FABRICATION METHOD FOR THE SAME |
摘要 |
<p>A solid state imaging device with an easy structure in which have the high sensitivity which reaches the wide wavelength region from visible light to near infrared light wavelength region, and dark current is reduced, and a fabrication method for the same, are provided. A solid state imaging device and a fabrication method for the same, the solid state imaging device comprising: a circuit unit (30) formed on a substrate; and a photoelectric conversion unit (28) including a lower electrode layer (25) placed on the circuit unit (30), a compound semiconductor thin film (24) of chalcopyrite structure which is placed on the lower electrode layer (25) and functions as an optical absorption layer, and an optical transparent electrode layer (26) placed on the compound semiconductor thin film (24), wherein the lower electrode layer (25), the compound semiconductor thin film (24), and the optical transparent electrode layer (26) are laminated one after another on the circuit unit (30).</p> |
申请公布号 |
EP2124256(A1) |
申请公布日期 |
2009.11.25 |
申请号 |
EP20080704358 |
申请日期 |
2008.02.01 |
申请人 |
ROHM CO., LTD.;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
MATSUSHIMA, OSAMU;TAKAOKA, MASAKI;MIYAZAKI, KENICHI;ISHIZUKA, SHOGO;SAKURAI, KEIICHIRO;NIKI, SHIGERU |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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