发明名称 MAGNETORESISTIVE ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a magnetoresistive element which reduces power consumption and improves stability.SOLUTION: The magnetoresistive element comprises: a stationary layer that maintains a predetermined magnetization direction; a free layer in which the magnetization direction is variable; and an insulator layer that is provided between the stationary layer and the free layer. The stationary layer, the free layer and the insulator layer form a magnetic tunnel junction layer. The free layer 13 includes at least a first magnetic layer 31 and a second magnetic layer 33 of which the Curie temperature is lower than that of the first magnetic layer 31. The Curie temperature of the second magnetic layer 33 is made lower than that of the first magnetic layer, thereby reducing a current amount to invert the magnetization direction of the first magnetic layer during write processing.SELECTED DRAWING: Figure 3
申请公布号 JP2016092066(A) 申请公布日期 2016.05.23
申请号 JP20140221404 申请日期 2014.10.30
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 SONOBE YOSHIAKI;KITA EIJI
分类号 H01L43/08;H01L21/8246;H01L27/105;H01L29/82 主分类号 H01L43/08
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