| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a support substrate capable of suppressing a jump in temperature dependency of a thermal expansion coefficient (discontinuous change of the thermal expansion coefficient against temperature change), a support substrate manufactured by the method, and a method for manufacturing a semiconductor wafer capable of suppressing crack occurrence.SOLUTION: A method for manufacturing a support substrate comprises the steps of: forming a first mixture including silicon oxide and at least one selected from a group composed of metal oxide, metal nitride, and metal oxynitride; forming a first sintered compact by burning the first mixture; forming a second mixture including the first sintered compact and yttria-stabilized zirconia; and forming a second sintered compact by burning the second mixture. |
