发明名称 COMPOSITE FOR FORMING DIELECTRIC THIN FILM, DIELECTRIC THIN FILM USING THE SAME, THIN FILM CAPACITOR, SEMICONDUCTOR DEVICE, AND METHOD OF FORMING DIELECTRIC THIN FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide a composite for forming a thin film consisting of strontium titanate and manganese additive strontium titanate which are homogenous to suppress occurrence of micro-cracks along a grain boundary, with which the thin film of satisfactory surface morphology is formed, which does not deteriorate operation environment, and which is excellent in stability; and also to provide a method of forming the thin film using them. <P>SOLUTION: The characteristic of the composite for forming the thin film of strontium titanate is obtained by dissolving or reacting at least one kind selected from a group of strontium metal, strontium alkoxide and strontium carboxylate, titanium alkoxide, and the acid anhydride of monocarboxylic acid and/or carboxylic acid in an organic solvent containing alcohols by &ge;60 % mass. Furthermore, the characteristic of the composite for forming the thin film of manganese additive strontium titanate is obtained by dissolving or reacting manganese material in the composite for forming the thin film of strontium titanate. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005353879(A) 申请公布日期 2005.12.22
申请号 JP20040173762 申请日期 2004.06.11
申请人 KANTO CHEM CO INC;NEC CORP 发明人 ISHII YASUHIRO;YAMAMICHI SHINTARO;SHINNAI SATONOBU;KATSURAGI HAYATO
分类号 C04B35/46;H01G4/33;H01L21/316 主分类号 C04B35/46
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