Semiconductor constructions

摘要

Some embodiments include semiconductor constructions having first and second electrically conductive lines that intersect with one another at an intersection. The first line has primarily a first width, and has narrowed regions directly against the second line and on opposing sides of the second line from one another. Electrically conductive contacts are along the first line and directly electrically coupled to the first line, and one of the electrically conductive contacts is directly against the intersection. Some embodiments include methods of forming intersecting lines of material. First and second trenches are formed, and intersect with one another at an intersection. The first trench has primarily a first width, and has narrowed regions directly against the second trench and on opposing sides of the second trench from one another. Material is deposited within the first and second trenches to substantially entirely fill the first and second trenches.

主权项

1. A semiconductor construction, comprising:
first and second trenches that intersect at an intersection; the first trench having primarily a first width, and having a narrowed region directly against the second trench; material within the first and second trenches, the material within the first and second trenches being configured as first and second lines, respectively, which intersect at the intersection; wherein the first trench has a pair of the narrowed regions on opposing sides of the second trench from one another; wherein the narrowed regions have lateral dimensions along and parallel with the second trench, and have longitudinal dimensions orthogonal to the lateral dimensions; and wherein the longitudinal dimensions are less than or equal to the lateral dimensions.