Mechanisms for forming image sensor device

摘要

Embodiments of mechanisms for forming an image sensor device are provided. The image sensor device includes a semiconductor substrate and an isolation structure in the semiconductor substrate. The image sensor device also includes an active region in the semiconductor substrate and surrounded by the isolation structure. The active region includes a light sensing region and a doped region, and the doped region has a horizontal length and a vertical length. A ratio of the horizontal length to the vertical length is in a range from about 1 to about 4.

主权项

1. An image sensor device, comprising:
a semiconductor substrate; an isolation structure in the semiconductor substrate; and an active region in the semiconductor substrate and surrounded by the isolation structure, wherein the active region comprises a light sensing region and a doped region, the doped region is outside of the light sensing region and has a horizontal length and a vertical length, and a ratio of the horizontal length to the vertical length is in a range from about 1 to about 4, wherein the doped region comprises a channel region and a source/drain region of a transfer transistor, and the source/drain region of the transfer transistor serves as a floating diffusion region of the image sensor device.