Photoelectric conversion device

摘要

A solar cell is provided with: a first conductivity layer comprising a first conductivity type material; a sensitizer layer formed on the first conductivity layer; and a second conductivity layer comprising a second conductivity type material and formed on the sensitizer layer. At least one of the first conductivity layer, the second conductivity layer and the sensitizer layer has a first semiconductor of a first film thickness and a second semiconductor of a second film thickness.

主权项

1. A solar cell is provided with:
a first conductivity layer comprising a first band gap energy; an InN sensitizer layer formed on the first conductivity layer and comprising a third band gap energy; and a second conductivity layer formed on the sensitizer layer and comprising a second band gap energy, wherein at least one of the first conductivity layer and the second conductivity layer has InN of a first film thickness and GaN of a second film thickness, wherein the film thickness of the InN sensitizer layer is two molecular layers or less, wherein the first band gap energy and the second band gap energy are corresponding to about 2.13 eV, about 1.94 eV, about 1.63 eV, about 1.37 eV, about 1.25 eV, or about 0.94 eV, wherein the third band gap energy is less than the first band gap energy and the second band gap energy, and difference thereof is 500 meV or less, wherein an electric charge support generated in the InN sensitizer layer moves to at least one of the first conductivity layer and the second conductivity layer by intraband transition.