| 发明名称 | Method of manufacturing semiconductor device | ||
| 摘要 | A technique capable of suppressing a variation in a characteristic of a semiconductor device includes: (a) polishing a substrate including: a first insulating film having a first groove; and a first metal film formed in the first groove and on the first insulating film; (b) forming a second insulating film on the substrate after performing (a); (c) polishing the second insulating film; (d) measuring a thickness distribution of the second insulating film on the substrate after performing (c); and (e) forming a third insulating film having a thickness distribution different from that of the second insulating film measured in (d) to compensate for a thickness distribution of a stacked insulating film including the second insulating film and the third insulating film. | ||
| 申请公布号 | US9484249(B1) | 申请公布日期 | 2016.11.01 |
| 申请号 | US201615058718 | 申请日期 | 2016.03.02 |
| 申请人 | Hitachi Kokusai Electric, Inc. | 发明人 | Ohashi Naofumi;Takano Satoshi |
| 分类号 | H01L21/00;H01L21/768;H01L21/66 | 主分类号 | H01L21/00 |
| 代理机构 | Edell, Shapiro & Finnan LLC | 代理人 | Edell, Shapiro & Finnan LLC |
| 主权项 | 1. A method of manufacturing a semiconductor device, comprising: (a) polishing a substrate including: a first insulating film having a first groove; and a first metal film formed in the first groove and on the first insulating film; (b) forming a second insulating film on the substrate after performing (a); (c) polishing the second insulating film; (d) measuring a thickness distribution of the second insulating film on the substrate after performing (c); and (e) forming a third insulating film having a thickness distribution different from that of the second insulating film measured in (d) to compensate for a thickness distribution of a stacked insulating film including the second insulating film and the third insulating film. | ||
| 地址 | Tokyo JP | ||