发明名称 |
Selective ECC refresh for on die buffered non-volatile memory |
摘要 |
Apparatuses, systems, methods, and computer program products are disclosed for on die buffered non-volatile memory management. A method includes storing data in a first set of non-volatile memory cells. A method includes determining whether to perform an error-correcting code (ECC) refresh for data to be copied from a first set of non-volatile memory cells to a second set of non-volatile memory cells based on one or more attributes associated with the data. A method includes storing data in a second set of non-volatile storage cells representing data using more storage cells per cell than a first set of non-volatile storage cells. |
申请公布号 |
US9489263(B2) |
申请公布日期 |
2016.11.08 |
申请号 |
US201514593965 |
申请日期 |
2015.01.09 |
申请人 |
SANDISK TECHNOLOGIES LLC |
发明人 |
Hyun Jea;Wood Robert |
分类号 |
G11C29/00;G06F11/10;G11C29/52;G11C16/34;G11C29/02 |
主分类号 |
G11C29/00 |
代理机构 |
Kunzler Law Group, PC |
代理人 |
Kunzler Law Group, PC |
主权项 |
1. A method comprising:
determining whether to perform an error correcting code (ECC) refresh for data to be copied from a first set of non-volatile memory cells to a second set of non-volatile memory cells based on one or more attributes associated with the data, the second set of non-volatile memory cells configured to store more bits per cell than the first set of non-volatile memory cells; adjusting one or more read voltage thresholds for the first set of non-volatile memory cells in response to determining to perform the ECC refresh; and reading the data from the first set of non-volatile memory cells using the adjusted one or more read voltage thresholds for copying the data to the second set of non-volatile memory cells. |
地址 |
Plano TX US |