| 发明名称 |
METHOD FOR PRODUCING A DEVICE |
| 摘要 |
A method for producing a device includes depositing a lower electrode metal and a film whose resistance changes. The film whose resistance changes and the lower electrode metal are etched to form a pillar-shaped phase-change layer and a lower electrode. A reset gate insulating film and a reset gate metal are deposited and etched to form reset gates. |
| 申请公布号 |
US2016365511(A1) |
申请公布日期 |
2016.12.15 |
| 申请号 |
US201615248109 |
申请日期 |
2016.08.26 |
| 申请人 |
Unisantis Electronics Singapore Pte. Ltd. |
发明人 |
MASUOKA Fujio;NAKAMURA Hiroki |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method for producing a device, the method comprising:
depositing a lower electrode metal, and a film whose resistance changes; etching the film whose resistance changes, and the lower electrode metal to form a pillar-shaped phase-change layer and a lower electrode; depositing a reset gate insulating film; depositing a reset gate metal; and etching the reset gate metal to form reset gates. |
| 地址 |
Peninsula Plaza SG |
