| 发明名称 |
SYSTEMS AND METHODS FOR FORMING ULTRA-SHALLOW JUNCTIONS |
| 摘要 |
A method for forming a junction on a substrate includes removing a native oxide layer of a bulk material; doping an outer layer of the bulk material with molecular hydrogen to create a hydrogen-doped outer layer; and nano-doping the hydrogen-doped outer layer using one of boron or phosphorous to a target junction depth to create a nano-doped layer. |
| 申请公布号 |
US2016365251(A1) |
申请公布日期 |
2016.12.15 |
| 申请号 |
US201514735541 |
申请日期 |
2015.06.10 |
| 申请人 |
LAM RESEARCH CORPORATION |
发明人 |
Kim Yunsang;Hong YounGi;Berry Ivan |
| 分类号 |
H01L21/225;H01L21/324;H01L21/30 |
主分类号 |
H01L21/225 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a junction on a substrate, comprising:
removing a native oxide layer of a bulk material; doping an outer layer of the bulk material with molecular hydrogen to create a hydrogen-doped outer layer; and nano-doping the hydrogen-doped outer layer using one of boron or phosphorous to a target junction depth to create a nano-doped layer. |
| 地址 |
Fremont CA US |
