Method for manufacturing a polycrystalline dielectric layer

摘要

A method manufactures a capacitor having polycrystalline dielectric layer between two metallic electrodes. The dielectric layer is formed by a polycrystalline growth of a dielectric metallic oxide on one of the metallic electrodes. At least one polycrystalline growth condition of the dielectric oxide is modified during the formation of the polycrystalline dielectric layer, which results in a variation of the polycrystalline properties of the dielectric oxide within the thickness of said layer.

主权项

1. A device, comprising:
a dielectric layer that includes:
a first polycrystalline dielectric sublayer of a molecular material, the first polycrystalline dielectric sublayer having a first polycrystalline structure and a first crystallization rate; anda second polycrystalline dielectric sublayer of the molecular material directly on the first polycrystalline sublayer, the second polycrystalline dielectric sublayer having a second polycrystalline structure and a second crystallization rate that is different than the first crystallization rate and within 10 percent of the first crystallization rate.