| 发明名称 | Cu pillar bump with L-shaped non-metal sidewall protection structure | ||
| 摘要 | An L-shaped sidewall protection process is used for Cu pillar bump technology. The L-shaped sidewall protection structure is formed of at least one of non-metal material layers, for example a dielectric material layer, a polymer material layer or combinations thereof. | ||
| 申请公布号 | US9524945(B2) | 申请公布日期 | 2016.12.20 |
| 申请号 | US201012781987 | 申请日期 | 2010.05.18 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Hwang Chien Ling;Wu Yi-Wen;Liu Chung-Shi |
| 分类号 | H01L23/488;H01L23/00 | 主分类号 | H01L23/488 |
| 代理机构 | Hauptman Ham, LLP | 代理人 | Hauptman Ham, LLP |
| 主权项 | 1. An integrated circuit device, comprising: a bump structure formed on a semiconductor substrate, wherein the bump structure comprises a top surface and a sidewall surface, the bump structure further comprises a solder layer, and the semiconductor substrate comprises a surface region adjacent to the sidewall surface of the bump structure; and an L-shaped protection structure covering the sidewall surface of the bump structure and extending to the surface region of the semiconductor substrate, wherein the L-shaped protection structure is formed of a non-metal material layer, and the L-shaped protection structure has an upper surface that is higher than the top surface of the bump structure. | ||
| 地址 | TW | ||