Power semiconductor housing with redundant functionality

摘要

In various embodiments, a power semiconductor housing having an integrated circuit is provided. The integrated circuit may include: a first gate pad and a second gate pad; and a first gate contact and a second gate contact; wherein the first gate pad is electrically connected to the first gate contact; wherein the second gate pad is electrically connected to the second gate contact. The integrated circuit may further include a drain-contact surface, wherein the drain-contact surface is connected to a drain contact; and a second drain contact, which is electrically connected to the drain-contact surface of the integrated circuit.

主权项

1. A power semiconductor device comprising an integrated circuit, wherein the integrated circuit comprises:
at least a first gate pad electrically connected to at least at least a first gate contact; at least two drain contacts formed from at least a first drain contact surface and directly connected to the drain contact surface; a source-contact surface substantially surrounded by the at least a first drain contact surface; at least two source contacts electrically connected to the source-contact surface; wherein the at least a first gate contact is adjacent to the at least two drain contacts and the at least two source contacts; and wherein the at least two drain contacts are disposed on the same side of the integrated circuit as the at least two source contacts.