发明名称 |
Semiconductor devices having an improved gate |
摘要 |
A MOSFET comprises a silicon substrate 1 having a source/drain region 7b formed in a surface region thereof, an insulating film 3 formed of silicon oxide, and a gate electrode 4a. The side surface region of the electrode 4a is covered with an insulating film 6 formed of silicon nitride. The insulating film 6 has an extended portion interposed between the electrode 4a and the insulating film 3 in a manner to surround the lower corner portion 4b of the electrode. Since the insulating film 6 has a dielectric constant larger than that of the insulating film 3, it is possible to suppress the electric field intensity at the lower corner portion 4b of the electrode.
|
申请公布号 |
US5254867(A) |
申请公布日期 |
1993.10.19 |
申请号 |
US19910726764 |
申请日期 |
1991.07.08 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUKUDA, SANAE;SHIGYO, NAOYUKI |
分类号 |
H01L21/28;H01L29/423;H01L29/51;H01L29/78;(IPC1-7):H01L29/78;H01L29/06 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|