发明名称 Continuous heat treatment system of semiconductor wafers for eliminating thermal donor.
摘要 <p>A heat treatment system is fabricated from a loading section (21), a heat treatment section (22) and a outlet section (23) integrated with one another, and the heat treatment section comprises a transfer mechanism (22a) provided between the loading section and the outlet section for successively transferring silicon wafers (W), a heating unit (22b) provided along the transfer mechanism for heating the silicon wafers, and a cooling unit (22c) provided along the transfer mechanism and closer to the outlet section than the heating section for cooling the silicon wafers so that the silicon wafers are continuously treated with heat for killing thermal donor without any handling by operators. &lt;IMAGE&gt;</p>
申请公布号 EP0582039(A1) 申请公布日期 1994.02.09
申请号 EP19930105783 申请日期 1993.04.07
申请人 MITSUBISHI MATERIALS CORPORATION;MITSUBISHI MATERIALS SILICON CORPORATION 发明人 TSURUTA, SHOJI
分类号 H01L21/00;H01L21/677;(IPC1-7):H01L21/00 主分类号 H01L21/00
代理机构 代理人
主权项
地址