发明名称 |
NITRIDE SEMICONDUCTOR LASER DEVICE AND A METHOD FOR IMPROVING ITS PERFORMANCE |
摘要 |
The present invention relates to a nitride semiconductor laser device provided with a window layer on a light-emitting end face of the resonator which comprises an active layer of nitride semiconductor between the n-type nitride semiconductor layers and the p-type nitride semiconductor layers, in which at least the radiation-emitting end face of said resonator is covered by said window layer comprising monocrystalline nitride of general formula Al<SUB>x</SUB>Ga<SUB>1-x-y</SUB>IN<SUB>y</SUB>N, where 0<=x+y<=1, 0<=x<=1 and 0<=y<1, having a wider energy gap than that of the active layer and being formed at a low temperature so as not to damage said active layer. Formation of such a window layer improves significantly the performance of the nitride laser device according to the invention. |
申请公布号 |
PL376672(A1) |
申请公布日期 |
2006.01.09 |
申请号 |
PL20030376672 |
申请日期 |
2003.06.26 |
申请人 |
AMMONO SP.Z OO.;NICHIA CORP. |
发明人 |
DWILINSKI ROBERT TOMASZ;DORADZINSKI ROMAN MAREK;SIERZPUTOWSKI LESZEK PIOTR;GARCZYNSKI JERZY;KANBARA YASUO |
分类号 |
H01L21/208;H01S5/323;C30B7/00;C30B9/00;H01S5/028;H01S5/16;H01S5/343 |
主分类号 |
H01L21/208 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|