| 摘要 |
A silicon film is formed on the surface of a substrate for a photomask, and a silicon nitride film is formed thereon. Then the silicon film and the silicon nitride film are patterned into desired shapes by photolithography method, the edge portion of the patterned silicon film is oxidized to provide a translucent region consisting of a silicon oxide film only on the edge portion, and the silicon nitride film is removed.
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