发明名称 ALUMINUM NITRIDE AND DEVICE FOR PRODUCING SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To reduce the lightness of AlN and to make the color nearly black without adding a metal compd. such as a sintering aid or a blackening agent, especially a heavy metal compd. to the AlN. SOLUTION: The g-value of unpaired electrons in this AlN in its spectrum by an electron spin resonance method is >=2.0010, preferably >=2.0040, Al-Al bonds have been formed in the principal crystal phase of the AlN and the AlN has a subsidiary crystal phase made of AlON besides the principal crystal phase. In the spectrum, spin per unit mg of Al is <=5&times;10<12> spin/mg.
申请公布号 JPH09110405(A) 申请公布日期 1997.04.28
申请号 JP19960207556 申请日期 1996.07.19
申请人 NGK INSULATORS LTD 发明人 KOBAYASHI HIROMICHI;BESSHO HIROKI;MORI YUKIMASA
分类号 C01B21/072;C04B35/581;H01L21/205;H01L21/324 主分类号 C01B21/072
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