| 摘要 |
<p>PROBLEM TO BE SOLVED: To read data at a high speed under low voltage by connecting a plurality of memory cells included in a column with a first source line, connecting of a plurality of memory cells included in a neighboring column with a second source line, and by making the first source line electrically independent from the second source line. SOLUTION: A source line SL1 corresponds to a column including M11 to M14, a source line SL2 corresponds to a column including M21 to M24, a source line SL3 corresponds to a column including M31 to M34, and a source line SL4 corresponds to a column including M41 to M44. That is, in a non-volatile semiconductor memory device 10, a memory cell of one column does not share a source line with a memory cell of the other column. Further, an element- separating region and a bit line contact are provided, and the element-separating region is positioned between the source line SL2 and the source line SL3, whereby neighboring source lines are electrically independent.</p> |
