| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor storage device whose word line is hardly disconnected even if it is made fine, and its manufacturing method. SOLUTION: First and second active regions arranged at a specified interval in a first direction are defined by an element isolation structural body 2 formed on a surface of the substrate 1. A first floating gate electrode 30F formed of a conductive material is formed to extend from a first active region to the element isolation structural body 2. A second floating gate electrode formed of a conductive material is formed to extend from a second active region to the element isolation structural body. A dielectric insulation region is provided on the element isolation structural body 2 and connects a first floating gate electrode and a second floating gate electrode physically. A control gate electrode is continuously formed on the first and second floating gate electrodes and the insulation isolation region.
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