| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can reduce leakage current and slow the rise of the absolute flat band voltage including an annealing method capable of reducing lost boron. SOLUTION: This semiconductor device manufacturing method comprises a CVD film forming process for forming a CVD film with a nitriding treatment or an oxynitriding treatment by CVD method after a silicon oxide film is formed on a silicon substrate, and a CVD film annealing process for annealing the CVD film in the atmosphere of gaseous ozone. A semiconductor device manufacturing apparatus 10 comprises a means for forming a CVD film and a means for annealing a CVD film. In the manufacturing apparatus 10, a plurality of silicon substrates 20 are mounted on a stepped wafer port 18, and the process gas is fed from a gas feeder tube 24 toward the upper part of a reactive tube 12.
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