Sensing scheme for low-voltage flash memory

摘要

Single-ended sensing devices for sensing a programmed state of a floating-gate memory cell are adapted for use in low-voltage memory devices. The sensing device has an input node selectively coupled to the memory cell. The sensing device includes a precharging path for applying a precharge potential to the input node of the sensing device for precharging bit lines prior to sensing the programmed state of the memory cell, and a reference current path for applying a reference current to the input node of the sensing device. The sensing device still further includes a sense inverter having an input coupled to the input node of the sensing device and an output for providing an output signal indicative of the programmed state of the memory cell. The reference current is applied to the input node of the sensing device during sensing of the programmed state of the memory cell.