| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can suppress the variation of threshold voltage, accompanying unnecessary movement of charges in use. <P>SOLUTION: A nonvolatile memory cell, an nMOS transistor and a pMOS transistor are formed on the surface of an Si substrate 1, and then an interlayer dielectric 19 is formed to cover them. Next, a plurality of contact plugs 20 are formed in the interlayer dielectric 19 so as to be connected to the control gate 11 of the nonvolatile memory cell, the source or the drain 17 of the nMOS transistor, and the source and the drain 18 of the pMOS transistor, respectively. Then, wiring 21 with a single layer is formed to connect the control gate 11 with the sources or the drains 17 and 18 of the nMOS transistor and the pMOS transistor via the contact plugs 20. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
