发明名称 MATERIAL FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD
摘要 <p>Disclosed are: a material for the formation of a conductive anti-reflection film, which can prevent the reflection of UV ray, has excellent antistatic effect and a high sensitivity, can prevent the accumulation of charge even when exposed to a light such as electron beam, is free of the concern about pattern defect or misalignment, and enables the formation of a high-resolution and fine resist pattern, wiring pattern or the like at a low cost, in a simple manner and with high efficiency; and others. The material comprises at least a base resin having a conductivity, a cross-linking agent, a thermal acid generator and a solvent.</p>
申请公布号 WO2008114411(A1) 申请公布日期 2008.09.25
申请号 WO2007JP55665 申请日期 2007.03.20
申请人 FUJITSU LIMITED;KON, JUNICHI 发明人 KON, JUNICHI
分类号 G03F7/11;C09D5/24;C09D201/00;G02B1/11;H01L21/027 主分类号 G03F7/11
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