| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing reliability from being deteriorated. <P>SOLUTION: The semiconductor device includes an electrode pad 2 formed on the top surface of a semiconductor substrate 1 and a first opening 3a that exposes the top surface of the electrode pad 2, and comprises, on the top surface of the semiconductor substrate 1, a passivation layer 3 formed so as to partially overlap the electrode pad 2, a barrier metal layer 5 formed on the electrode pad 2, and a solder bump 6 formed on the barrier metal layer 5. The outer circumferential end 5b of the barrier metal layer 5 is formed inside the first opening 3a of the passivation layer 3 in a planar view. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
