| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor laser element that can improve processing precision of a ridge portion by improving controllability of etching depth and then sufficiently suppress occurrence of kinking. <P>SOLUTION: On a semiconductor substrate 101, semiconductor layers are laminated which include a buffer layer 102, a first lower clad layer 103, an etching start layer 104, a second lower clad layer 105, an active layer 107, and an upper clad layer 109 at least in this order. Semiconductor layers 111 to 105 are etched using a first photomask to expose the etching start layer 104 in a monitor region 108. Semiconductor layers 111 to 109a are dry-etched using a second photomask 116 while the progression of the dry etching is observed through a second etching monitoring opening portion 118, and the dry etching is stopped in predetermined timing corresponding to disappearance of the first lower clad layer 103. <P>COPYRIGHT: (C)2009,JPO&INPIT |
