发明名称 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, ELECTRONIC COMPONENT, AND METHOD FOR MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device whose package size is close to its chip size and to effectively absorb thermal stress in addition to a stress absorbing layer, to provide a method for manufacturing the same, to provide a circuit substrate, and to provide an electronic appliance. <P>SOLUTION: The semiconductor device whose package size is close to its chip size, and absorbs thermal stress effectively in addition to the stress absorbing layer. The semiconductor device 150 includes a semiconductor chip having an electrode 158, a resin layer 152 as a stress relaxing layer formed on the semiconductor chip, wiring 154 formed from the electrode 158 to the resin layer 152, and a solder ball 157 formed on the wiring 154 above the resin layer 152. The resin layer 152 is formed so as to have a recessed part 152a on a surface, and the wiring 154 is formed passing on the recessed part 152a. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009004815(A) 申请公布日期 2009.01.08
申请号 JP20080247427 申请日期 2008.09.26
申请人 SEIKO EPSON CORP 发明人 HASHIMOTO NOBUAKI
分类号 H01L23/12;H01L21/3205;H01L21/60;H01L21/768;H01L23/31;H01L23/34;H01L23/36;H01L23/485;H01L23/52;H01L23/532 主分类号 H01L23/12
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