发明名称 SOLID STATE IMAGE SENSOR WITH ENHANCED CHARGE CAPACITY AND DYNAMIC RANGE
摘要 Certain aspects relate to imaging systems and methods for manufacturing imaging systems and image sensors. The imaging system includes a pixel array including a plurality of pixels, the pixels configured to generate a charge when exposed to light and disposed on a first layer. The imaging system further includes a plurality of pixel circuits for reading light integrated in the pixels coupled thereto, each of the plurality of pixel circuits comprising one or more transistors shared between a subset of the plurality of the pixels, the one or more transistors disposed on a second layer different than the first layer. The imaging system further includes a plurality of floating diffusion nodes configured to couple each of the plurality of pixels to the plurality of pixel circuits.
申请公布号 WO2016089551(A1) 申请公布日期 2016.06.09
申请号 WO2015US59732 申请日期 2015.11.09
申请人 QUALCOMM INCORPORATED 发明人 HSEIH, BIAY-CHENG;GOMA, SERGIU RADU
分类号 H04N5/3745;H01L27/146 主分类号 H04N5/3745
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