发明名称 METHOD FOR ESTIMATING THRESHOLD VOLTAGE IN THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a method for estimating a threshold voltage in a thin-film transistor of a thin-film transistor substrate (TFT substrate) without increasing steps of manufacturing the TFT substrate.SOLUTION: A method for estimating a threshold voltage in a thin-film transistor of a TFT substrate includes the steps of: receiving power by a power-receiving sensor in the other end of each of a plurality of wirings while applying voltage to one end of each of the plurality of wirings, and measuring the current flowing through the power-receiving sensor (step S12); and estimating a threshold voltage on the basis of the predetermined relationship between the current and the threshold voltage (step S13). The TFT substrate comprises a substrate, a thin-film transistor arranged on the substrate, and a plurality of wirings (data lines) arranged on the substrate. The plurality of wirings are electrically connected each other through a drain-to-source path of the thin-film transistor.SELECTED DRAWING: Figure 12
申请公布号 JP2016111095(A) 申请公布日期 2016.06.20
申请号 JP20140245254 申请日期 2014.12.03
申请人 JOLED INC 发明人 SUGAWARA YUTA
分类号 H01L21/336;G09F9/00;H01L21/66;H01L29/786 主分类号 H01L21/336
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