| 摘要 |
PROBLEM TO BE SOLVED: To achieve a photoelectric conversion element having a quantum dot structure, capable of performing carrier transport by thermal excitation suitably, with small constraint on the structure and process.SOLUTION: A photoelectric conversion element includes a light absorption layer having a plurality of quantum dots, and a barrier layer composed of a substance having a band gap larger than that of the structure material of quantum dots, where the plurality of quantum dots are discretely located in the barrier layer. The band offset amount ΔEc(eV) of conduction band between the quantum dots and barrier layer satisfies a relation ΔEc≤-ln(I/4.29×10)×(k×T/q), where T(K) is absolute temperature, I(mA/cm) is current density per 1Sun, kis Boltzmann constant and q is elementary electric charge.SELECTED DRAWING: Figure 3 |
