INVERTED HIGH-VOLTAGE LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

An inverted high-voltage light emitting device and a manufacturing method therefor. The device comprises: a light emitting module composed of a plurality of inverted light emitting units connected in series to one another, wherein the light emitting module is provided with a first surface and a second surface that are opposite, clearances (111) are arranged among all the inverted light emitting units, and each light emitting unit comprises an n-type semiconductor layer (101), a light emitting layer and a p-type semiconductor layer (102); a light conversion layer (112), formed on the first surface of the light emitting module and covering the side surface of each light emitting unit; an insulation layer (107), formed on the second surface of the light emitting module, covering the second surface of the whole light emitting module, and only exposing the n-type semiconductor layer (101) of the first light emitting unit of the light emitting module and the p-type semiconductor layer (102) of the last light emitting unit of the light emitting module; and a first support electrode (109a) and a second support electrode (109b), formed on the insulation layer (107) and electrically isolated from each other, wherein the first support electrode (109a) is electrically connected to the n-type semiconductor layer (101) of the first light emitting unit of the light emitting module, and the second support electrode (109b) is electrically connected to the p-type semiconductor layer (102) of the last light emitting unit of the light emitting module.