发明名称 Flash memory controller with calibrated data communication
摘要 An integrated circuit device includes a transmitter circuit operable to transmit a timing signal over a first wire to a DRAM. The DRAM receives a first signal having a balanced number of logical zero-to-one transitions and one-to-zero transitions and samples the first signal at a rising edge of the timing signal to produce a respective sampled value. The device further includes a receiver circuit to receive the respective sampled value from the DRAM over a plurality of wires separate from the first wire. In a first mode, the transmitter circuit repeatedly transmits incrementally offset versions of the timing signal to the DRAM until sampled values received from the DRAM change from a logical zero to a logical one or vice versa; and in a second mode, it transmits write data over the plurality of wires to the DRAM according to a write timing offset generated based on the sampled values.
申请公布号 US9405678(B2) 申请公布日期 2016.08.02
申请号 US201514859991 申请日期 2015.09.21
申请人 Rambus Inc. 发明人 Zerbe Jared LeVan;Donnelly Kevin S.;Sidiropoulos Stefanos;Stark Donald C.;Horowitz Mark A.;Yu Leung;Vu Roxanne;Kim Jun;Garlepp Bruno W.;Ho Tsyr-Chyang;Lau Benedict Chung-Kwong
分类号 G06F12/02;G06F13/364;G11C7/10;G06F1/10;G06F13/16;G06F13/42;H04L7/00;H04L7/033 主分类号 G06F12/02
代理机构 The Neudeck Law Firm, LLC 代理人 The Neudeck Law Firm, LLC
主权项 1. A flash memory controller, comprising: a bus interface to couple to a plurality of flash memory devices, the bus interface including a circuit to send at least one signal to individually address a selected flash memory device of the plurality of flash memory devices and store a device-specific value in a reference voltage register of the selected flash memory device; and a transmitter to output a data signal to the selected flash memory device wherein the device-specific value stored in the reference voltage register of the selected flash memory device controls a reference voltage used by a corresponding receiver circuit of the selected flash memory device, the receiver circuit to receive the data signal transmitted by the flash memory controller to the selected flash memory device.
地址 Sunnyvale CA US