发明名称 |
Flash memory controller with calibrated data communication |
摘要 |
An integrated circuit device includes a transmitter circuit operable to transmit a timing signal over a first wire to a DRAM. The DRAM receives a first signal having a balanced number of logical zero-to-one transitions and one-to-zero transitions and samples the first signal at a rising edge of the timing signal to produce a respective sampled value. The device further includes a receiver circuit to receive the respective sampled value from the DRAM over a plurality of wires separate from the first wire. In a first mode, the transmitter circuit repeatedly transmits incrementally offset versions of the timing signal to the DRAM until sampled values received from the DRAM change from a logical zero to a logical one or vice versa; and in a second mode, it transmits write data over the plurality of wires to the DRAM according to a write timing offset generated based on the sampled values. |
申请公布号 |
US9405678(B2) |
申请公布日期 |
2016.08.02 |
申请号 |
US201514859991 |
申请日期 |
2015.09.21 |
申请人 |
Rambus Inc. |
发明人 |
Zerbe Jared LeVan;Donnelly Kevin S.;Sidiropoulos Stefanos;Stark Donald C.;Horowitz Mark A.;Yu Leung;Vu Roxanne;Kim Jun;Garlepp Bruno W.;Ho Tsyr-Chyang;Lau Benedict Chung-Kwong |
分类号 |
G06F12/02;G06F13/364;G11C7/10;G06F1/10;G06F13/16;G06F13/42;H04L7/00;H04L7/033 |
主分类号 |
G06F12/02 |
代理机构 |
The Neudeck Law Firm, LLC |
代理人 |
The Neudeck Law Firm, LLC |
主权项 |
1. A flash memory controller, comprising:
a bus interface to couple to a plurality of flash memory devices, the bus interface including a circuit to send at least one signal to individually address a selected flash memory device of the plurality of flash memory devices and store a device-specific value in a reference voltage register of the selected flash memory device; and a transmitter to output a data signal to the selected flash memory device wherein the device-specific value stored in the reference voltage register of the selected flash memory device controls a reference voltage used by a corresponding receiver circuit of the selected flash memory device, the receiver circuit to receive the data signal transmitted by the flash memory controller to the selected flash memory device. |
地址 |
Sunnyvale CA US |