发明名称 |
Method of controlling erase operation of a memory and memory system implementing the same |
摘要 |
A non-volatile memory and a method of controlling an erase operation of the non-volatile memory using a controller are provided. The method of controlling the erase operation includes beginning performance of the erase operation, monitoring a next command to be performed in the non-volatile memory while performing the erase operation, determining an erase status, and continuing, suspending or canceling the erase operation based on the determination result of the erase status. |
申请公布号 |
US9443599(B2) |
申请公布日期 |
2016.09.13 |
申请号 |
US201514679046 |
申请日期 |
2015.04.06 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Yi Hyun-Ju;Ahn Seok-Won;Oh Hwa-Seok |
分类号 |
G11C16/04;G11C16/16;G06F13/16;G11C16/32 |
主分类号 |
G11C16/04 |
代理机构 |
Volentine & Whitt, PLLC |
代理人 |
Volentine & Whitt, PLLC |
主权项 |
1. A method, executed by a memory controller, of controlling an erase operation of a non-volatile memory, the method comprising:
beginning performance of the erase operation; monitoring for an existence of a next command, received from an external host device, to be performed in the non-volatile memory while performing the erase operation; determining an erase status of the erase operation; and selectively continuing, suspending, or canceling the erase operation based on the determination result of the erase status and the existence of the next command. |
地址 |
Suwon-si, Gyeonggi-do KR |