发明名称 Method of controlling erase operation of a memory and memory system implementing the same
摘要 A non-volatile memory and a method of controlling an erase operation of the non-volatile memory using a controller are provided. The method of controlling the erase operation includes beginning performance of the erase operation, monitoring a next command to be performed in the non-volatile memory while performing the erase operation, determining an erase status, and continuing, suspending or canceling the erase operation based on the determination result of the erase status.
申请公布号 US9443599(B2) 申请公布日期 2016.09.13
申请号 US201514679046 申请日期 2015.04.06
申请人 Samsung Electronics Co., Ltd. 发明人 Yi Hyun-Ju;Ahn Seok-Won;Oh Hwa-Seok
分类号 G11C16/04;G11C16/16;G06F13/16;G11C16/32 主分类号 G11C16/04
代理机构 Volentine & Whitt, PLLC 代理人 Volentine & Whitt, PLLC
主权项 1. A method, executed by a memory controller, of controlling an erase operation of a non-volatile memory, the method comprising: beginning performance of the erase operation; monitoring for an existence of a next command, received from an external host device, to be performed in the non-volatile memory while performing the erase operation; determining an erase status of the erase operation; and selectively continuing, suspending, or canceling the erase operation based on the determination result of the erase status and the existence of the next command.
地址 Suwon-si, Gyeonggi-do KR