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1. A GOA circuit based on oxide semiconductor thin film transistor, comprising a plurality of GOA unit circuits which are cascade connected, and the GOA unit circuit of every stage comprises a pull-up controlling module, a pull-up module, a transmission module, a first pull-down module, a bootstrap capacitor module and a pull-down holding module;
N is set to be a positive integer and except the GOA unit circuit of the first stage, in the GOA unit circuit of the Nth stage: the pull-up controlling module comprises an eleventh thin film transistor, and a gate of the eleventh thin film transistor receives a stage transfer signal of the GOA unit circuit of the former N−1th stage, and a source is electrically coupled to a constant high voltage level, and a drain is electrically coupled to a first node; the pull-up module comprises: a twenty-first thin film transistor, and a gate of the twenty-first thin film transistor is electrically coupled to the first node, and a source is electrically coupled to an mth set of clock signal corresponding to the GOA unit circuit of the Nth stage, and a drain outputs a scan driving signal; the transmission module comprises: a twenty-second thin film transistor, and a gate of the twenty-second thin film transistor is electrically coupled to the first node, and a source is electrically coupled to the mth set of clock signal corresponding to the GOA unit circuit of the Nth stage, and a drain outputs a stage transfer signal; the first pull-down module comprises a fortieth thin film transistor and a forty-first thin film transistor; both a gate and a source of the fortieth thin film transistor are electrically coupled to the first node, and a drain is electrically coupled to a drain of the forty-first thin film transistor; a gate of the forty-first thin film transistor is inputted with an m+2th set of clock signal corresponding to the GOA unit circuit of the after next N+2th stage, and a source is inputted with the scan driving signal; the bootstrap capacitor module comprises a capacitor, and one end of the capacitor is electrically coupled to the first node, and the other end is electrically coupled to the scan drive signal; the pull-down holding module comprises: a dual inverter composed by a plurality of thin film transistor, a forty-second thin film transistor, a thirty-second thin film transistor, a seventy-fifth thin film transistor and a seventy-sixth thin film transistor; an input end of the dual inverter is electrically coupled to the first node, and an output end is electrically coupled to a second node; a gate of the forty-second thin film transistor is electrically coupled to the second node, and a drain is electrically coupled to the first node, and a source is electrically coupled to a third node; a gate of the thirty-second thin film transistor is electrically coupled to the second node, and a drain is electrically coupled to the scan driving signal, and a source is electrically coupled to a first constant negative voltage level; both a gate and a drain of the seventy-fifth thin film transistor are electrically coupled to the first node, and a source is electrically coupled to the third node; a gate of the seventy-sixth thin film transistor is electrically coupled to the second node, and a drain is electrically coupled to the third node, and a source is electrically coupled to a second constant negative voltage level; the second constant negative voltage level is lower than the first constant negative voltage level; all the thin film transistors are oxide semiconductor thin film transistors. |
