| 摘要 |
A semiconductor device includes a gate electrode on a semiconductor substrate, a source electrode and a drain electrode that are provided on the semiconductor substrate, the gate electrode being interposed between the source electrode and the drain electrode, an insulating layer covering the gate electrode, and a source wall that extends from the source electrode and passes over the gate electrode, an end surface of the source wall being interposed between the gate electrode and the drain electrode and being located in a position lower than a top surface of the gate electrode.
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