| 摘要 |
<p>PURPOSE:To provide a method of manufacturing a semiconductor device high in capacitance as prescribed, enhanced in degree of integration, and stable in operation. CONSTITUTION:A part of a storage node 3 is made to extend along the primary surface of a silicon substrate 10. A first and a second dielectric film, 4a and 4b, are formed so as to cover the surface of the extension of the storage node 3. A cell plate is provided with a first part 4a and a second part 4b. The first part 4a is formed to cover the underside of the extension of the storage node 3. The second part 4b is formed covering the upside of the extension of the storage node 3 as electrically insulated from the first part 4a.</p> |
