| 摘要 |
<p>PURPOSE:To provide a semiconductor device in which an N-type TFT for a picture element part and an N-type TFT and a P-type TFT of a complementary (C) type circuit for driving the former are built in the same substrate, and also to provide the manufacture thereof without increasing the number of a photo-resist process more than that in a conventional N-type circuit. CONSTITUTION:A gate electrode 2, a gate insulating film 3 and silicon layers (5, 4 & 5) for each TFT are sequentially formed on a transparent substrate 1, and after N-type impurities are doped thereinto, photo etching is applied for the division of the substrate into first through third islands to make a semiconductor layer for each TFT so that the first island is formed to act as an N-type semiconductor layer 6 for a picture element part and the second island is formed to act as an N-type semiconductor layer 6 for a C-type circuit, and then a film of ITO for a picture element electrode 8 is so accumulated as to cover only the first and the second islands. After that, doping is performed in such a manner that the concentration of P-type impurities becomes higher than that of N-type impurities to form the third island in a P-type semiconductor layer for the C-type circuit, and then the source/drain electrodes 9 for each TFT and also a protective film 10 are formed.</p> |
