| 摘要 |
<p>PURPOSE:To prevent peeling of an intermediate metal layer and a solder layer of a bump electrode and to prevent damage of an insulating film and a semiconductor substrate by covering a protrusionlike metal layer with a positive type photoresist, irradiating it with light, allowing the photoresist to remain on an intermediate region between a head part and the substrate, and selectively forming a metal film on an upper surface of the head part. CONSTITUTION:A copper-plated layer 9 having a support part 9a fixed directly to or through conductive layers 5, 6 to a semiconductor substrate 1 and a head part 9b protruding outside from a side of the part 9a and formed on the upper part of the part 9a is formed. The layer 9 is coated with positive type photoresists 10, 11, irradiated with light, allowed the photoresists 10, 11 to remain on an intermediate region between the part 9b and the substrate 1, and a metal film is selectively formed on the part 9b. Peeling of the metal layer and the solder layer is prevented by the metal film, and generation of a damage of the insulating film and the substrate can be also suppressed.</p> |
