| 摘要 |
<p>PURPOSE:To reduce a light leak current by making an activated layer thinner than the other region in a particular region from a junction part between a channel region and a source or a drain region. CONSTITUTION:A scanning line 3 is combined with a gate electrode 5 in a switching element 4, and an activated layer 6 of poly-crystal silicon includes a source region 7 and a drain region 8 and a channel region 9 and an intermediate region 10 between the source region 7 or the drain region 8 and the channel region 9. In the film thickness of the activated layer 6, the film thickness of the channel region 9 and the intermediate region 10 is made to be 200Angstrom which is thinner as compared with that of the source region 7 and the drain region of 2000Angstrom . The intermediate region 10 has a length (l) of not less than at least the diffusion length of minority carrier (not less than 0.1mum to not sore than 500mum). Since light absorption is uniformly brought about in a film with respect to the film thickness of the activated layer 6, a light leak current is reduced by making a film thinner.</p> |
