| 摘要 |
A preheat device (160) is installed, thereby executing before forming bumps (16) to electrode parts (15) a pre formation temperature control for bonding promotion to promote bonding between the electrode parts and the bumps during a bump formation. Metal particles of the electrode parts can be changed to an appropriate state before the bump formation. Phenomenally, a bonding state between the electrode parts and the bumps can be improved as compared with the conventional art. In a further arrangement of the present invention, semiconductor components with bumps formed can be heated under a bonding strength improvement condition by a bonding stage (316) through controlling the heating by a controller (317). <IMAGE> |
