| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which is markedly enhanced in service life and whose P-side electrode is also elongated in service life. SOLUTION: A semiconductor light emitting device is equipped with a P-type clad layer 9 and P-type contact layers 10, 11, 12, and 13 formed above the clad layer 9 which are each formed like a stripe, wherein the stripe width of a contacting interface between the uppermost P-type contact layer 13 and a P-side electrode 15 is preferably set 1.5 times or above as large as the minimum stripe width of the P-type clad layer 9. The P-type clad layer 9 or the lowermost P-type contact layer 10 is formed like a forward mesa, an inverted mesa, or a rectangle in cross section, an insulating film possessed of a stripe- shaped opening is provided in the P-type clad layer, a P-type contact layer is formed on the insulting film so as to come into contact with the P-type clad layer through the opening, and the stripe width of the P-type contact layer at a contacting interface between the P-type contact layer and the P-side electrode is preferably set 1.5 times or above as large as the minimum stripe width of the opening. |
