| 摘要 |
The present invention provides a semiconductor device comprising: a semiconductor substrate having semiconductor elements, and a plurality of wirings formed on the semiconductor substrate via an isolation film, wherein the wirings are formed in at least one layer level so that the region in which the wirings are formed is divided into a wiring region of small wiring-to-wiring distance and a wiring region of large wiring-to-wiring distance; a first inter-level isolation film is selectively formed in the wiring region of small wiring-to-wiring distance and a second inter-level isolation film is formed in the wiring region of large wiring-to-wiring distance to cover the wirings; throughholes are formed only in the second inter-level isolation film; and the dielectric constant of the first inter-level isolation film is smaller than the dielectric constant of the second inter-level isolation film. This semiconductor device has a fine multi-layered wiring structure of high performance and remarkably improved reliability. <IMAGE> |
