发明名称 RESIST COMPOSITION FOR DEEP ULTRAVIOLET LIGHT
摘要 <p>A resist composition for deep ultraviolet light comprising (a) one of the following resin components (i)-(iii): (i) a resin which becomes alkali-soluble by eliminating protective groups by the action of an acid, (ii) a combination of an alkali-soluble resin and a dissolution-inhibiting compound, and (iii) a combination of an alkali-soluble resin and a crosslinkable compound, (b) an acid generater, (c) a special anthracene derivative, and (d) a solvent, is suitable for forming a pattern using deep ultraviolet light, KrF excimer laser light, etc., on a highly reflective substrate having level differences due to absorption of undesirable reflected deep ultraviolet light.</p>
申请公布号 KR100249254(B1) 申请公布日期 2000.06.01
申请号 KR19950006580 申请日期 1995.03.27
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO.,LTD.;WAKO PURE CHEMICAL INDUSTRIES LTD. 发明人 URANO, FUMIYOSHI;YASUDA, TAKANORI;KATSUYAMA, AKIKO;YAMASHITA, KAZIHIRO
分类号 G03F7/004;G03F7/039;G03F7/09;(IPC1-7):G03F7/004 主分类号 G03F7/004
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