METHOD FOR PRODUCING A SILICIDE FIELD EMITTER ARRAY USING DOUBLE-METAL LAYER OF FED

摘要

PURPOSE: A method for forming silicide field emitter array using dual metal layer is provided to make FEA that pure silicide is formed with by using secondary deposited metal as protection layer when forming silicide after removing deposition material of the top of silicon tip with CMP process. CONSTITUTION: An oxidation film disk of a designated size is formed on the top of silicon substrate(11). A peaked shape silicon tip is formed by making a heat oxidation silicon surface exposed after making an isotropic etching lower silicon substrate(11) considering above oxidation film disk as etching mask. Gate oxidation film(17) is made an incline deposition on the top of whole structure using electron beam depositor. Gate metal is made an incline deposition in a designated angle on the top of whole structure. Material of the top of gate metal is removed by CMP process. Tip is protruded by removing selectively only oxidation film around silicon tip. The first metal(23) is deposited first on the top of whole structure by sputtering, and then the second metal(25) is deposited on the top of the first metal(23) as protection layer of the first metal(23). It is removed residual metal not to be reacted between the second metal(25) deposited secondary and the first metal deposited first.