| 摘要 |
PURPOSE: A method for manufacturing a metal interconnection of a semiconductor device is provided to be capable of enhancing process margin by preventing failure of metallization due to polymer residues. CONSTITUTION: An insulating layer(4) is formed on a semiconductor substrate(1) with an isolation layer(2). A contact hole is formed by selectively etching the insulating layer. A barrier metal film(5) is formed on the resultant structure and a photoresist layer is filled in the contact hole. A photoresist pattern with a plug shape is formed in the contact hole by anisotropic etching of the photoresist layer. A metal film(7) is then formed in the contact hole, thereby forming a metal interconnection.
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