| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To design a mask pattern which can suppress manufacture fluctuation of an exposure mask in a designing apparatus for an exposure mask and a method for designing an exposure mask to be used in a photolithographic process in the manufacture of a semiconductor device or the like. <P>SOLUTION: The designing apparatus 1 for an exposure mask is equipped with: a design data extraction unit 2 to extract the distance between a line pattern and an adjacent pattern along the extended direction of the line pattern from the design data of an exposure pattern; a correction determining unit 3 to determine a correction amount for the distance from the relation between the preliminarily obtained distance and the dimensional tolerance after manufacturing the line pattern; and a design data correcting unit 4 to influence the correction amount determined in the correction determining unit 3 on the length of the line pattern so as to obtain the design data after correction. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
