发明名称 THIN FILMS PREPARED WITH GAS PHASE DEPOSITION TECHNIQUE
摘要 A process for the preparation of thin films of an organic-inorganic nature comprising growing with a gas phase deposition technique preferable the ALCVD (atomic layer chemical vapour deposition) technique. As an example, trimethylaluminium (TMA), hydroquinone (Hq) and phloroglucinol (PhI) have been used as precursors to fabricate thin films of aluminium benzene oxides constructing a hybrid type film. Further thin films with a hybrid nature are described. These films can be used as an optical material, a pressure sensor, a gas sensor, temperature sensor, magnetic field sensor, electric field sensor, a piezoelectric material, a magnetic material, a semiconductor material and as an electric insulating material.
申请公布号 KR20070095919(A) 申请公布日期 2007.10.01
申请号 KR20077014802 申请日期 2005.12.28
申请人 UNIVERSITETET I OSLO 发明人 NILSEN OLA;FJELLVAG HELMER
分类号 C23C16/00;B05D1/18;B05D1/36;B05D5/00;B05D7/00;B05D7/24;C23C;C23C16/30;C23C16/455;C30B25/02;C30B29/10;C30B29/54;H01L21/20 主分类号 C23C16/00
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