| 摘要 |
A substrate processing method is provided to prevent damage that disturbs planarization of a substrate or causes generation of foreign substances by making an electrostatic chuck come in contact with a protection layer formed on the back surface of the substrate wherein curable resin is cured to form the protection layer. A substrate processing system includes at least an etching apparatus for performing a plasma etching treatment on a substrate. The etching apparatus has an electrostatic chuck for electrostatically absorbing the substrate. The electrostatic chuck comes in contact with the back surface of the substrate. Curable resin is deposited on the front and back surfaces of the substrate. The deposited curable resin is cured. The plasma etching treatment is performed on the surface of the substrate. The cured curable resin is removed.
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