| 摘要 |
A surface-emitting type semiconductor laser includes: a lower mirror; an active layer formed above the lower mirror; an upper mirror formed above the active layer; and a lens section formed above the upper mirror, wherein n<SUB>1</SUB>>n, where X is a design wavelength, n<SUB>1 </SUB>is a refractive index of a topmost layer of the upper mirror with respect to light of the design wavelength, and n is a refractive index of the lens section with respect to light of the design wavelength, the lens section has a thickness of lambda/2n at an anti-node of the zeroth order resonance mode component among light resonating in the active layer, and the lens section has a thickness of lambda/4n at at least a portion of an anti-node of the first order resonance mode component among the light resonating in the active layer.
|
